Читальный зал -->  Солнечные элементы 

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 [ 86 ] 87 88 89 90 91

Mitchell. К. W., Fahrenbruch, A. L., and Bube, R. H. (1977). J. Appl. Phys. 48, 4.165. Nelson, R. J. (1978). J. Vac. Sci. Technol. 15, 1475.

Nelson, R. J., Williams. J. S.. Uamy, H. J., Miller, В., Casey, H. C, Jr., Parkinson, B. A .

and Heller, A. (1980). Appl. Phys. Ull. 36, 76. Nordheim, L. (1928). Proc. R. Soc. London. Ser. A 121, 626.

Nussbaum, A. (1962). Semiconductor Device Physics, p. 129. Prentice Hall, Englewood Cliffs, New Jersey,

Oldham, W. G.. and Milnes, A. G. (1963). Solid-Stale Electron. 6, 121.

Oldham, W. G., and Milnes, A. G. (1964). Solid-State Electron. 7, 153.

Olsen. G. H., and Ettenberg, M. (1978). Growth effects in the heteroepitaxy of III-V compounds. In Crystal Growth: Theory and Techniques (C.H.L. Goodman, ed.). Vol. 2, p. 1. Plenum, New York.

Olsen, G. H., Nuese, C. J.. and Smith, R. T. (1978). J. Vac. Sci. Technol. 15, 1410. J. Appl. Phys. 49. 5523.

Ottaviani, G., Sigurd, D., Marrello, V., Mayer, J. W., and McCaldin, J. O. (1974). J. Appl.

Phys. 45. 1730. Padovani, F. A. (1968). Solid-State Electron. 11, 193.

Padovani, F. A. (1971). The voltage-current characteristics of metal-semiconductor contacts. In Semiconductors and Semimetals (R. K. Willardson and A. C. Beer, eds.). Vol. 7A, p. 75. Academic Press, New York.

Padovani, F. A., and Stratton, R. (1966). Solid-State Electron. 9, 695.

Parker, G. H., and Mead, C. A. (I%9a). Phys. Rex. 184, 780.

Parker, G. H., and Mead, C. A. (l%9b). Appl. Phys. Lett. 14, 21.

Parker, G. H., McGill, T. C, Mead, C. A., and Hoffman, D. (1968). Solid-State Electron. 11,201.

Pellegrini, В., and Salardi. G. (1975). Solid-State Electron. 18, 791. Ponpon. J. P., and Siffert, P. (1977). Rex: Phys. Appl. 12, 427.

Ponpon, J. P., and Siffert, P. (1978). Proc. 13th IEEE Photovoltaic Specialists. Conf.. p. 639.

Popovic, R. S. (1978). Solid-Slate Electron. 21, 1133.

Pulfrey, D. L.,(1976). IEEE Trans. Electron Devices ED-23, 587.

РиШгеу, D. L. (1978). IEEE Trans. Electron Devices ED-25, 1308.

Rediker. R. H., Stopek. S., and Ward, J. H. R. (1964). Solid-State Electron. 7, 621.

Rhoderick, E. H. (1974). Conf Ser.-Inst. Phys. No. 22, p. 3.

Riben, A. R. (1965). Thesis, Carnegie Inst. Technol., Pittsburgh, Pennsylvania.

Riben, A. R., and Feucht, D. L. (1966a). Int. J. Electron. 20, 583.

Riben, A. R., and Fuecht, D. L. (1966b). Solid-State Electron. 9, 1055.

Rideout. V. L. (1975). Solid-State Electron. 18, 541.

Rose. A. (1954). Onde Electr. 34, 645. [Also see Johnson, E. D., and Rose, A., Proc. IRE

47,407 (1959).] Rose. A. (1955). Phys. Rev. 97, 1538. Rose, A. (1965). J. Appl. Phys.35, 2664.

Rothwarf, A. (1975). Int. Workshop CdS Sol. Cells Other Abrupt Heterojunctions. Univ. Del. NSF-RANN AER 75-15858, p. 9.

Rothwarf, A., Burton, L. С Hadley, H. C, and Stork. G. M. (1975). Proc. llth IEEE Photovoltaic Specialists Conf, p. 476.

Sah, C.-T. (1962). IRE Trans. Electron Devices ED-9, 94.

Sah, C.-T. (1977). IEEE Trans. Electron Devices ED-24, 410.

Sah, C.-T., Noyce, R. N.. and Shockley, W. (1957J. Proc. IRE 45, 1228.

St. Pierre, J. A., Singh, R., Shewchun, J., and Loferski, J. J. (1976). Proc. 12th IEEE Photovoltaic Specialists Conf, p. 847.

Salles, Y., Diguet, D., and Lauvray, H. (1978). Proc. I3lh IEEE Photovoltaic Specialists Conf.. p. 257.

Salter, G. C, and Thomas, R. E. (1976). Proc. Ilth IEEE Photovoltaic Specialists Conf, p. 862.-

Sarrabayrouse, G., Buxo, J.. Myszkowski, A., and Esteve, E. (1977). Rev. Phys. Appl. 12, 433.

Scharfetter, D. L. (1965). Solid-State Electron. 8, 299. Scaife, D. E. (1980). Solar Energy 25(1), 41. Schluter. M. (1978). J. Vac. Sci. Technol. 15, 1374. Schottky. W. (1938). Nalurwissenschaflen 26, 843.

Schottky, W., and Spenke. E. (1939). Wiss. Veroeff. Siemens-V/erken 18, 225. Schulz. M., and Johnson, N. M. (1977). Appl. Phys. Lett. 31, 622.

Schwartz, В., ed. (1969). Ohmic Contacts to Semiconductors. Electrochem. Soc., Pennington, New Jersey.

Schwuttke, G. H. (1974). Proc. Symp. Mater. Sci. Aspects Thin Film Syst. Sol. Energy Convers.

(NSF-RANN), Tucson, Ariz. p. 49.

Seager, C. H., and Ginley, D. S. Barrier heights and passivation of grain boundaries in poly-crystalline Si. (1980). Sol. Cells 1, 293.

Sello. H. (1968). Ohmic contacts and integrated circuits. In Ohmic Contacts to Semiconductors (B. Schwartz, ed.) p. 277. Electrochem. Soc., Pennington, New Jersey.

Shewchun, J.. Green, M. A., and King, F. D. (1974). Solid-State Electron. 17, 551, 563.

Shewchun, J., Dubow, J., Myszkowski, A., and Singh. R. (1978). J. Appl. Phys. 49, 855.

Shockley. W.. and Queisser. H. J. (1961). J. Appl. Phys. 32, 510.

Smith, D. L. (1977). Phys. Slat. Sol. (a) 44, 381.

Spicer, W. E., Lindau, L, Gregory, P. E.. Gamer, C. M., Pianetta, P., and Chye, P. W.

(1976). J. Vac. Sci. Technol. 13, 780-Spicer. W. E.. Lindau. I.. Skeath, P., and Su, C. Y. (1980). J. Vac. Sci. Technol. 17(5),

1019.

Springgate, W. F. (1968). In Ohmic Contacts to Semiconductors (B. Schwartz, ed.), p.

253. Electrochem. Soc. Pennington, New Jersey. Stannaid, I. (1979). J. Vac. Sci. Technol. 16. 1462.

SUrn, R. I., and Yeh, Y. C. M. (1977). IEEE Trans. Electron Devices ED-24, 476.

Stratton. R. (1962). Phys. Rev. 125, 67.

Stringfellow, G. B. (1976). Vac. Sci. Technol. 13,908.

Sze. S. M. (1969). Physics of Semiconductor Devices, Chap. 8. Wiley, New York. Tansley. T. L. (1968). Proc. Int. Symp. GaAs, 2nd. Dallas, Tex. p. 222. I№S, London. Tansley. T. L. (1971). Heterojunction properties. In Semiconductors and Semimetals (R.

K. Willardson and A. C. Beer. eds.). Vol. 7A, p. 294. Academic Press, New York. Tansley. T. L., and Owen. S. J. T. (1976). IEEE Trans. Electron Devices ED-23, 1123. TeVelde. T. S. (1973). Solid-State Electron. 16, 1305.

Theil, F. A., Bacon, D. D., Buehler, E.. and Bachmann. K. J. (1977)../. Electrochem. Sm: 124, 317.

Thompson, M. J. and Comwall, M. G. (1972). Solid-Stat- Electron. 15, 861. Ting, C. Y., and Chen, C. Y. (1971). Solid-State Electron. 14, 433. Van C)pdoф. C, and Vrakking, J. (1967). Solid-State Electnm. 10, 955. Van Ruyven, L. J. (1964). Phys. Status Solidi 3, К109.

Van Ruyven, L. J. (1972). Phenomena at heterojunctions. Ann . Rev. Mater. Sci. 2, 501. Van Ruyven, L. J., Papenhuijzen, J. M. P., and Verhoeven. A. C. J. (I%5). Solid-State

Electron. S.bil. Van Vliet, K. M., (1966). Solid-State Electron. 9, 185.

Viktorovitch, P.. and Kamarinos, G. (1977). J. Appl. Phys. 48, 3060. Wager. J. F.. and Wilmsen, C. W. (1980). J. Appl. Phys. 51, 812. Wagner. C. (1931). Phys. Z. 32, 641.

Weinreich, O., Matar6. H. F., and Reed, B. (I960). -Solid State Physics in Electronics and

Telecommunications, Vol. I, p. 97. Academic Press, New York. Womac. J. F., and Rediker, R. H. (1972). J. Appl. Phys. 43, 4129. Wu, C. M., and Yang. E. S. (1979). SoVd-State Electron. 22, 241. Yoder. M. N. (1980). Solid-State Electron. 23, 117.

Глава 3.

Arora. J. D.. and Mathur, P. C. (1981). J. Appl. Phys. 52, 3646. Berger. H. H. (1972). J. Elfclrochrm Soc. 19, 507. Cox, R. H., and Strack, H. (I%7). Solul-Stme Electron. 10, 1213. DeVos, A. (1980). J. Phys. 1) 13. 8.39.

Dunbar, P. M., and Hauser, J. R. (1976a). Proc I.Uh IEEE Photovoltaic Specialists Conf.. p. 23.

Dunbar, P. M., and Hauser, J. R (1976b). Solid Slote Electron. 19, 95. Fahrenbruch. A. L.. and Bube. R. H. (1974). J Appl. Ph\s. 45. 1264. Fang. C. R.. and Hauser. J. R. (1978). Proc. 12th IEEE Photovoliou Spedolists Conf. p. 1306.

Fischer-Colbrie. E.. Wichner, R.. and Charlson. E. J. (1976). Proc. I2lh Photovoltaic Specialists Conf.. p. 40. Fossum, J. G. (1976). Solid-State Electron 19, 269.

Ghosh. A. K., Fishman. C, and Teng, T. (1980). J. Appl. Phys. 51, 446.

Graff, K.. and Fischer, H. (1979). Carrier lifetime in silicon and its impact on solar cell characteristics. In Solar Energy Conversion - Solid State Physics Aspects (B. O. Seraphin, ed.). Topics in Applied Physics, Vol. 31, p. 173. Springer-Verlag, Berlin and New York.

Handy. R. J. (I%7). Solid-State Electron. 10. 765.

Heizer, K. W.. and Chu. T. L. (1976). Solid-State Electron. 19. 471.

Ho, C. Т., and Mathias, J. D. (1978). IEEE Trans. Electron Devices ED.25, 1332.

Ho, C. Т., Bell, R. O.. and Wald, F. V. (1977). Appl. Phys. Lett. 31, 463.

Hutchby, J. A., and Fudurich, R. L. (1976). J. Appl. Phys 47, 3140.

Landsberg, P. (1977). Photochem. Photohiol. 26, 313. [Also see P. Landberg and J. Mallinson, Proc. CNES-CNRS Int. Conf Solar Electricity. Paris: CNRS, 1976, p. 27.]

Lindholm. F. A., Fossum. J. G., and Burgess, E. L. (1976). Proc. 12th IEEE Photovoltaic Specialists Conf: p. 33.

Lindholm, F. A.. Fossum, J. G., and Burgess, E. L. (1979). IEEE Trans. Electron Devices ED-26, 165.

Loferski, ]. J. (1956). J. Appl. Phys. 27. 777. [Reprinted in Solar Cells (C. E. Backus,

ed.), p. 96. IEEE Press, New York, 1976] Mathers, C. D. (1977). J. Appl. Phys. 48, 3181.

Mathur, P. C, Sharma, R. P., Saxena. P., and Arora. S. D. (1981). J. Appl. Phys. 52. 3651. Mitchell, K. W. (1977). Tech. Dig. IEEE Int. Electron Devices Meeting. Washington. DC. p. 229.

Mitchell. K. W., Fahrenbruch, A. L., and Bube, R. H. (1976). Solid-State Electron. 20, 559. Mitchell, K. W., Fahrenbruch, A. L., and Bube, R. H. (1977). J. Appl. Phys. 48. 4365.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 [ 86 ] 87 88 89 90 91

ООО «Мягкий Дом» - это Отечественный производитель мебели. Наша профильная продукция - это диваны еврокнижка. Каждый диван можем изготовить в соответствии с Вашими пожеланияи (размер, ткань и материал). Осуществляем бесплатную доставку и сборку.



Звоните! Ежедневно!
 (926)274-88-54 
Продажа и изготовление мебели.

Копирование контента сайта запрещено.
Авторские права защищаются адвокатской коллегией г. Москвы.